Freescale Semiconductor the leading provider of RF power technology for cellular markets, on Monday introduced its first RF power amplifier product built using gallium nitride (GaN) technology.
Freescale’s first GaN product, the AFG25HW355S device, is the latest addition to the industry’s most comprehensive portfolio of power amplifier solutions. Current Freescale RF power offerings include 12V, 28V and 50V silicon LDMOS products, 5V GaAs HBT, 5V and 12V GaAs pHEMT solutions, and high frequency SiGe technology featuring operation up to 100 GHz and beyond.
“Freescale’s GaN RF power solutions underscore our technology agnostic approach to the RF power market,” said Ritu Favre, vice president and general manager of Freescale’s RF Division. “Working with GaN in development since the mid-2000s, we have established an ideal blend of cost efficiency, performance and reliability, and the time is now right to add GaN based products to our broad array of RF power amplifier solutions.”